SiGe and Si Strained-Layer Epitaxy for Silicon Heterostructure Devices

Name: SiGe and Si Strained-Layer Epitaxy for Silicon Heterostructure Devices
Author: John D. Cressler

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SiliconMaterialsEpitaxyElectric propertiesBipolar transistorsHeterostructuresTransistorsTransistors bipolairesMatériauxHétérostructuresÉpitaxieTECHNOLOGY & ENGINEERING