Computer memory

presence of data additional to the actual data that may permit correction of errors in stored or transmitted data

timing information of a memory module

process of periodically reading information from an area of computer memory and immediately rewriting the read information to the same area without modification, for the purpose of preserving the information

Computer security exploit

time delay between data read command and availability of data in a computer's RAM

software or hardware component that facilitates data transfer, wear-leveling, error correction, and other important functions between flash memory and the host system

standardized way to automatically access information about a memory module

data structure

variant of computer RAM memory

Type of random-access memory

operating principle for certain storage media

synchronization barrier that forces an ordering constraint on memory accesses

concurrency control mechanism, analogous to database transactions for controlling access to shared memory in concurrent computing, that simplifies concurrent programming by allowing a group of load and store instructions to execute in an atomic way

random-access memory with processing elements integrated on the same chip

in computer science, the act of merging two adjacent free blocks of memory

thumb|Phison SSD controller Phison Electronics Corporation () is a Taiwanese public electronics company that primarily designs, manufactures and sells controllers for NAND flash memory chips. These are integrated into flash-based products such as USB flash drives, memory cards, and solid-state drives (SSDs).

read-only memory in which ferrite cores in a rope act merely as transformers, and whether a word line wire couples or not to the core encodes bits; first used in the 1960s by NASA in Mariner probes and in the Apollo Guidance Computer

dynamic random-access memory (DRAM) integrated circuit (IC) developed and fabricated by Intel

addressing paradigm modeling memory as one contiguous address space

computer memory access architecture

type of error where a signal or datum is wrong

software vendor's products family

class of file systems designed to run on flash memory

SONOS, short for "silicon–oxide–nitride–oxide–silicon", more precisely, "polycrystalline silicon"—"silicon dioxide"—"silicon nitride"—"silicon dioxide"—"silicon", is a cross sectional structure of MOSFET (metal–oxide–semiconductor field-effect transistor), realized by P.C.Y. Chen of Fairchild Camera and Instrument in 1977. This structure is often used for non-volatile memories, such as EEPROM and flash memories. It is sometimes used for TFT LCD displays.

type of computer memory that may be relatively easily written to as well as read from

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association of electronic companies of NAND flash interface technologies sector

semiconductor memory supply crisis

processing data tecnology

memory address serving as a reference point ("base") for other addresses

RAM consistency methods in multicore computers

high-speed internal memory used for temporary storage

variant of core memory

module containing SRAM used as an L2 cache in mid-1990s computers

memory hierarchy concept applied to CPU caches with multiple levels

proposed form of computer storage

new memory technology that uses copper nanowires

low-level commands of the BASIC programming language

In computer science, read–modify–write is a class of atomic operations (such as test-and-set, fetch-and-add, and compare-and-swap) that both read a memory location and write a new value into it simultaneously, either with a completely new value or some function of the previous value. These operations prevent race conditions in multi-threaded applications. Typically they are used to implement mutexes or semaphores. These atomic operations are also heavily used in non-blocking synchronization.

order of accesses to computer memory by a CPU

humorous fictional type of computer memory