Category
page 1III-V compounds
gallium arsenide
chemical semiconductor compound
boron nitride
chemical compound
aluminium phosphide
chemical compound
indium phosphide
chemical compound
aluminum nitride
chemical compound
aluminum antimonide
chemical compound
aluminium arsenide
chemical compound
gallium phosphide
chemical compound
indium arsenide
chemical compound
indium antimonide
chemical compound
gallium antimonide
chemical compound
boron phosphide
chemical compound
indium nitride
chemical compound
boron arsenide
chemical compound
aluminium gallium arsenide
Semiconductor material
indium gallium nitride
chemical compound
indium gallium arsenide
alloy
Aluminium gallium nitride
chemical compound
gallium arsenide phosphide
alloy
Aluminium gallium indium phosphide
chemical compound
Indium gallium phosphide
Semiconductor
Nanomesh
thumb|Perspective view of nanomesh, whose structure ends at the back of the figure. The distance between two pore centers is 3.2nm, and the pores are 0.05nm deep.
aluminium indium arsenide
alloy