Non-volatile memory

non-volatile memory used in computers and other electronic devices; class of storage medium used in computers and other electronic devices

electronic non-volatile computer storage device

semiconductor-based data storage medium, often used for auxiliary memory to store data

thumb|A cross section of legacy EPROM structure.Upper insulator: Lower insulator: tunnel oxide thumbnail|[[STMicroelectronics|STMicro M24C02 I²C serial type EEPROM]] thumbnail|[[Atmel AT93C46A die]] [[File:Atmel-avr-atusb162-HD.jpg|thumbnail| AT90USB162 MCU integrates 512 Byte EEPROM]]

form of digital memory that can be written once by blowing fuses/antifuses to set bits

thumb|An EPROM: the Texas Instruments TMS27C040, a CMOS chip with 4 megabits of storage and 8-bit output (shown here in a 600-mil ceramic dual-in-line package). The TMS27C040 operates at 5 volts, but must be programmed at 13 volts.

Spintronics (a portmanteau of spin transport electronics), also known as spin electronics, is the study of the intrinsic spin of the electron and its associated magnetic moment, in addition to its fundamental electronic charge, in solid-state devices. The field of spintronics concerns spin-charge coupling in metallic systems. The analogous effects in insulators fall into the field of multiferroics.

computer memory that can retain stored information even when not powered

predominant form of random-access computer memory for 20 years between about 1955 and 1975

magnetic data storage device

random-access memory that retains its information when power is turned off (non-volatile),in contrast to dynamic random-access memory (DRAM) and static random-access memory (SRAM), which both maintain data only for as long as power is applied

type of non-volatile computer memory

type of non-volatile random-access memory which stores data in magnetic domains

logical or physical storage device containing both solid-state and hard disk storage

electronic device using the ferroelectric effect to produce low density random access memory

device that configures programmable non-volatile integrated circuits

small, battery-backed memory component for storing a computer's BIOS settings

experimental memory device

technology introduced by Intel

Data storage format

non-volatile computer memory stored on nanoscopic pits burned into the surface of a thin polymer layer, read and written by a MEMS-based probe

memory cell/element capable of storing more than a single bit of information

operating principle for certain storage media

read-only memory in which ferrite cores in a rope act merely as transformers, and whether a word line wire couples or not to the core encodes bits; first used in the 1960s by NASA in Mariner probes and in the Apollo Guidance Computer

SONOS, short for "silicon–oxide–nitride–oxide–silicon", more precisely, "polycrystalline silicon"—"silicon dioxide"—"silicon nitride"—"silicon dioxide"—"silicon", is a cross sectional structure of MOSFET (metal–oxide–semiconductor field-effect transistor), realized by P.C.Y. Chen of Fairchild Camera and Instrument in 1977. This structure is often used for non-volatile memories, such as EEPROM and flash memories. It is sometimes used for TFT LCD displays.

association of electronic companies of NAND flash interface technologies sector

variant of core memory

new memory technology that uses copper nanowires

proposed form of computer storage

type of flash storage