Random-access memory

form of computer data storage

semiconductor memory that uses flip-flops to store each bit

predominant form of random-access computer memory for 20 years between about 1955 and 1975

random-access memory that retains its information when power is turned off (non-volatile),in contrast to dynamic random-access memory (DRAM) and static random-access memory (SRAM), which both maintain data only for as long as power is applied

dual-ported variant of dynamic RAM

type of non-volatile random-access memory which stores data in magnetic domains

electronic device using the ferroelectric effect to produce low density random access memory

type of computer memory

non-volatile memory type

Embedded DRAM (eDRAM) is dynamic random-access memory (DRAM) integrated on the same die or multi-chip module (MCM) of an application-specific integrated circuit (ASIC) or microprocessor. eDRAM's cost-per-bit is higher when compared to equivalent standalone DRAM chips used as external memory, but the performance advantages of placing eDRAM onto the same chip as the processor outweigh the cost disadvantages in many applications. In performance and size, eDRAM is positioned between level 3 cache and conventional DRAM on the memory bus, and effectively functions as a level 4 cache, though architec

Z-RAM is a tradename of a now-obsolete dynamic random-access memory technology that did not require a capacitor to maintain its state. Z-RAM was developed between 2002 and 2010 by a now-defunct company named Innovative Silicon.

semiconductor memory supply crisis

thumb|right|MoSys 1T-SRAM 1T-SRAM is a pseudo-static random-access memory (PSRAM) technology introduced by MoSys, Inc. in September 1998, which offers a high-density alternative to traditional static random-access memory (SRAM) in embedded memory applications. Mosys uses a single-transistor storage cell (bit cell) like dynamic random-access memory (DRAM), but surrounds the bit cell with control circuitry that makes the memory functionally equivalent to SRAM (the controller hides all DRAM-specific operations such as precharging and refresh). 1T-SRAM (and PSRAM in general) has a standard single-

Thyristor RAM (T-RAM) is a type of random-access memory dating from 2009 invented and developed by T-RAM Semiconductor, which departs from the usual designs of memory cells, combining the strengths of the DRAM and SRAM: high density and high speed. This technology, which exploits the electrical property known as negative differential resistance and is called thin capacitively-coupled thyristor, is used to create memory cells capable of very high packing densities. Due to this, the memory is highly scalable, and already has a storage density that is several times higher than found in convention

commonly used term for the integrated RAM used in Commodore's line of Amiga computers