Transistor modeling

transistor that uses both electrons and holes as charge carriers

variation in the effective width of the base in a bipolar junction transistor due to a variation in the applied base-to-collector voltage

minimum source-to-gate voltage for a field effect transistor to be conducting from source to drain

transistor current

mathematical model

model of electronic circuits involving transistors

secondary effect describing the reduction in threshold voltage Vth in MOSFETs with non-uniformly doped channel regions as the gate length increases

model of the bipolar junction transistor

feature of a MOSFET's current–voltage characteristic

effect in MOSFETs

simulation of physical processes taking place in an electronic device