Semiconductor structures

nano-scale semiconductor particle subject to quantum effects

semiconductor–semiconductor junction, formed at the boundary between a p-type and n-type semiconductor

insulating region in a conductive, dopend semiconductor

semiconductor manufacturing process

A heterojunction is an interface between two layers or regions of dissimilar semiconductors. These semiconducting materials have unequal band gaps as opposed to a homojunction. It is often advantageous to engineer the electronic energy bands in many solid-state device applications, including semiconductor lasers, solar cells and transistors. The combination of multiple heterojunctions together in a device is called a heterostructure, although the two terms are commonly used interchangeably. The requirement that each material be a semiconductor with unequal band gaps is somewhat loose, especial

concept in quantum mechanics

potential energy barrier in metal-semiconductor junctions

an electrically conducting wire in which quantum effects influence the transport properties

non-rectifying electrical junction: a junction between two conductors that has a linear current–voltage (I-V) curve as with Ohm's law

type of electrical junction

electronic states at the surface of materials

diagram plotting various key electron energy levels as a function of some spatial dimension, which is often denoted x

thumb|400px|right|A homojunction PN junction. The band at the interface is continuous. In forward bias mode, the [[depletion width decreases. Both p and n junctions are doped at a 1e15/cm3 doping level, leading to built-in potential of ~0.59 V. Observe the different Quasi Fermi levels for conduction band and valence band in n and p regions (red curves).]]

integrated circuit

Semiconductor structure

field-effect transistor

dielectric layer of a MOSFET separating the source and drain from the gate terminal

Applied electric field conductivity change

method used to isolate components by surrounding them with reverse biased p–n junctions