Category
page 1Transistor types
field-effect transistor
transistor that uses an electric field to control its electrical behaviour
bipolar junction transistor
transistor that uses both electrons and holes as charge carriers
MOSFET
thumb|upright=1.3|Two power transistor|power MOSFETs in [[D2PAK surface-mount packages. Operating as switches, each of these components can sustain a blocking voltage of 120V in the off state, and can conduct a con­ti­nuous current of 30 A in the on state, dissipating up to about 100 W and controlling a load of over 2000 W. A matchstick is pictured for scale.]]
insulated-gate bipolar transistor
three-terminal power semiconductor device
thin-film transistor
field-effect transistor device
Darlington transistor
compound structure consisting of two bipolar transistors
unijunction transistor
type of transistor
JFET
The junction field-effect transistor (JFET) is one of the simplest types of field-effect transistor. JFETs are three-terminal semiconductor devices that can be used as electronically controlled switches or resistors, or to build amplifiers.
high-electron-mobility transistor
field-effect transistor incorporating a heterojunction as the channel
FinFET
type of transistor used in nanoelectronic integrated circuits

ISFET
An ion-sensitive field-effect transistor (ISFET) is a field-effect transistor used for measuring ion concentrations in solution; when the ion concentration (such as H+, see pH scale) changes, the current through the transistor will change accordingly. Here, the solution is used as the gate electrode. A voltage between substrate and oxide surfaces arises due to an ion sheath. It is a special type of MOSFET (metal–oxide–semiconductor field-effect transistor), and shares the same basic structure, but with the metal gate replaced by an ion-sensitive membrane, electrolyte solution and reference ele

MESFET
thumb|upright=1.6|MESFET schematic
A MESFET (metal–semiconductor field-effect transistor) is a field-effect transistor semiconductor device similar to a JFET with a Schottky (metal–semiconductor) junction instead of a p–n junction for a gate.
multigate device
type of MOS field-effect transistor with more than one gate
point-contact transistor
first type of solid-state electronic transistor ever constructed
single-electron transistor
electronic device based on the Coulomb blockade effect
Schottky transistor
combination of a transistor and a Schottky diode that prevents the transistor from saturating by diverting the excessive input current
floating-gate MOSFET
MOSFET whose gate is left galvanically isolated in a circuit

Bio-FET
A field-effect transistor-based biosensor, also known as a biosensor field-effect transistor (Bio-FET or BioFET), field-effect biosensor (FEB), or biosensor MOSFET, is a field-effect transistor (based on the MOSFET structure) that is gated by changes in the surface potential induced by the binding of molecules. When charged molecules, such as biomolecules, bind to the FET gate, which is usually a dielectric material, they can change the charge distribution of the underlying semiconductor material resulting in a change in conductance of the FET channel. A Bio-FET consists of two main compartmen
programmable unijunction transistor
three-lead electronic semiconductor device with which is similar in characteristic to unijunction transistor except that it is programmable
heterojunction bipolar transistor
type of bipolar junction transistor (BJT) which uses differing semiconductor materials for the emitter and base regions, creating a heterojunction
optical transistor
device that switches or amplifies optical signals
LDMOS
LDMOS (laterally-diffused metal-oxide semiconductor) is a planar double-diffused MOSFET (metal–oxide–semiconductor field-effect transistor) used in amplifiers, including microwave power amplifiers, RF power amplifiers and audio power amplifiers. These transistors are often fabricated on p/p+ silicon epitaxial layers. The fabrication of LDMOS devices mostly involves various ion-implantation and subsequent annealing cycles. As an example, the drift region of this power MOSFET is fabricated using up to three ion implantation sequences in order to achieve the appropriate doping profile needed to w
chemical field-effect transistor
field-effect transistor used as a sensor for measuring chemical concentrations in solution.
grown-junction transistor
first type of bipolar junction transistor made
avalanche transistor
bipolar junction transistor designed to operate in avalanche breakdown region
ballistic transistor
transistor that uses use electromagnetic forces instead of a logic gate
spin transistor
Type of transistor
EOSFET
An EOSFET or electrolyte–oxide–semiconductor field-effect transistor is a FET, like a MOSFET, but with an electrolyte solution replacing the metal for the detection of neuronal activity. Many EOSFETs are integrated in a neurochip.
tunnel field-effect transistor
transistor which switches by modulating quantum tunneling through a barrier
Self-aligned gate
semiconductor Fabrication Technique