thumb|upright=1.3|Two power transistor|power MOSFETs in [[D2PAK surface-mount packages. Operating as switches, each of these components can sustain a blocking voltage of 120V in the off state, and can conduct a con­ti­nuous current of 30 A in the on state, dissipating up to about 100 W and controlling a load of over 2000 W. A matchstick is pictured for scale.]]
thumb|upright=1.3|Two power transistor|power MOSFETs in [[D2PAK surface-mount packages. Operating as switches, each of these components can sustain a blocking voltage of 120V in the off state, and can conduct a con­ti­nuous current of 30 A in the on state, dissipating up to about 100 W and controlling a load of over 2000 W. A matchstick is pictured for scale.]]
In electronics, the metal–oxide–semiconductor field-effect transistor (MOSFET, MOS-FET, MOS FET, or MOS transistor) is a type of field-effect transistor (FET), most commonly fabricated by the controlled oxidation of silicon. It has an insulated gate, the voltage of which determines the conductivity of the device. This ability to change conductivity with the amount of applied voltage can be used for amplifying or switching electronic signals. The term metal–insulator–semiconductor field-effect transistor (MISFET) is almost synonymous with MOSFET. Another near-synonym is insulated-gate field-effect transistor (IGFET).
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