MOSFET
Sign in to savethumb|upright=1.3|Two power transistor|power MOSFETs in [[D2PAK surface-mount packages. Operating as switches, each of these components can sustain a blocking voltage of 120V in the off state, and can conduct a con­ti­nuous current of 30 A in the on state, dissipating up to about 100 W and controlling a load of over 2000 W. A matchstick is pictured for scale.]]
Article
47 sectionsContents
- History
- Composition
- Operation
- Metal–oxide–semiconductor structure
- MOS capacitors and band diagrams
- Structure and channel formation
- Modes of operation
- Cutoff, subthreshold, and weak-inversion mode
- Triode mode or linear region (also known as the ohmic mode){{anchor|Linear mode}}
- Saturation or active mode
- Body effect
- Circuit symbols
- Applications
- MOS integrated circuits
- CMOS circuits
- Digital
- Analog
- Analog switches
- Single-type
- Dual-type (CMOS)
- Construction
- Gate material
- Insulator
- Junction design
- Scaling
- Higher subthreshold conduction
- Increased gate-oxide leakage
- Increased junction leakage
- Drain-induced barrier lowering and ''V''<sub>T</sub> roll off
- Lower output resistance
- Lower transconductance
- Interconnect capacitance
- Heat production
- Process variations
- Modeling challenges
- Other types
- Dual-gate
- Depletion-mode
- Metal–insulator–semiconductor field-effect transistor (MISFET)
- NMOS logic
- Power MOSFET
- Double-diffused metal–oxide–semiconductor ({{vanchor|DMOS}})
- Radiation-hardened-by-design (RHBD)
- Notes
- See also
- References
- External links
thumb|upright=1.3|Two power transistor|power MOSFETs in [[D2PAK surface-mount packages. Operating as switches, each of these components can sustain a blocking voltage of 120V in the off state, and can conduct a con­ti­nuous current of 30 A in the on state, dissipating up to about 100 W and controlling a load of over 2000 W. A matchstick is pictured for scale.]]
In electronics, the metal–oxide–semiconductor field-effect transistor (MOSFET, MOS-FET, MOS FET, or MOS transistor) is a type of field-effect transistor (FET), most commonly fabricated by the controlled oxidation of silicon. It has an insulated gate, the voltage of which determines the conductivity of the device. This ability to change conductivity with the amount of applied voltage can be used for amplifying or switching electronic signals. The term metal–insulator–semiconductor field-effect transistor (MISFET) is almost synonymous with MOSFET. Another near-synonym is insulated-gate field-effect transistor (IGFET).