Nanocircuits are electrical circuits operating on the nanometer scale where quantum mechanical effects become important. One nanometer is equal to 10−9 meters or a row of 10 hydrogen atoms. With such progressively smaller circuits, more can be fitted on a computer chip. This allows faster and more complex functions using less power. Nanocircuits are composed of three different fundamental components. These are transistors, interconnections, and architecture, all fabricated on the nanometer scale.
Nanocircuits are electrical circuits operating on the nanometer scale where quantum mechanical effects become important. One nanometer is equal to 10−9 meters or a row of 10 hydrogen atoms. With such progressively smaller circuits, more can be fitted on a computer chip. This allows faster and more complex functions using less power. Nanocircuits are composed of three different fundamental components. These are transistors, interconnections, and architecture, all fabricated on the nanometer scale.
== Various approaches to nanocircuitry== A variety of proposals have been made to implement nanocircuitry in different forms. These include Nanowires, Single-Electron Transistors, Quantum dot cellular automata, and Nanoscale Crossbar Latches. However, likely nearer-term approaches will involve incorporation of nanomaterials to improve MOSFETs (metal–oxide–semiconductor field-effect transistors). These currently form the basis of most analog and digital circuit designs, the scaling of which drives Moore's Law. A review article covering the MOSFET design and its future was published in 2004 comparing different geometries of MOSFETs under scale reduction and noted that circular cross-section vertical channel FETs are optimal for scale reduction. This configuration is capable of being implemented with a high density using vertical semiconductor cylindrical channels with nanoscale diameters and Infineon Technologies and Samsung have begun research and development in this direction resulting in some basic patents using nanowires and carbon nanotubes in MOSFET designs. In an alternative approach, Nanosys uses solution based deposition and alignment processes to pattern pre-fabricated arrays of nanowires on a substrate to serve as a lateral channel of an FET. While not capable of the same scalability as single nanowire FETs, the use of pre-fabricated multiple nanowires for the channel increases reliability and reduces production costs since large volume printing processes may be used to deposit the nanowires at a lower temperature than conventional fabrication procedures. In addition, due to the lower temperature deposition a wider variety of materials such as polymers may be used as the carrier substrate for the transistors opening the door to flexible electronic applications such as electronic paper, bendable flat panel displays, and wide area solar cells.
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