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零电容随机存储器
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Z-RAM is a tradename of a now-obsolete dynamic random-access memory technology that did not require a capacitor to maintain its state. Z-RAM was developed between 2002 and 2010 by a now-defunct company named Innovative Silicon.
Wikidata facts
- Subclass of
- dynamic random-access memory
Show 1 more fact
- different from
- zram
Sources (2)
via Wikidata · CC0
Article · 中文
零电容随机存储器（英語：Zero-capacitor random access memory，缩写：Z-RAM）是一种新型的动态随机存取存储器，是由Innovative Silicon公司基于SOI技術的浮体效应（Float body effect）研发的。该技术已经被超微半导体（AMD）许可用于未来的微处理器。Innovative Silicon宣称零电容随机存储器能够提供和静态随机存取存储器（SRAM，常在快取中应用）相似的存取速度，但是只使用了单一晶体管，因此能够提供更高的封装密度。
Abstract from DBpedia / Wikipedia · CC BY-SA