2N3055
Sign in to saveThe 2N3055 is a silicon NPN power transistor intended for general purpose applications. It was introduced in the early 1960s by RCA using a hometaxial power transistor process, transitioned to an epitaxial base in the mid-1970s. Its numbering follows the JEDEC standard. It is a transistor type of enduring popularity.
Wikidata facts
- Material used
- silicon
- Image
- 2N3055 RCA.JPG
Show 5 more facts
- Commons category
- 2N3055
- discoverer or inventor
- RCA Corporation
- inception
- 1960-00-00
- uses
- epitaxy
- maximum current
- 15
Sources (1)
via Wikidata · CC0
~13 min read
Encyclopedic overview
8 sectionsContents
- Specifications
- Maximum Ratings
- Transition Frequency, f<sub>T</sub>
- History
- Mid 1970s
- Related devices
- References
- Further reading
The 2N3055 is a silicon NPN power transistor intended for general purpose applications. It was introduced in the early 1960s by RCA using a hometaxial power transistor process, transitioned to an epitaxial base in the mid-1970s. Its numbering follows the JEDEC standard. It is a transistor type of enduring popularity.
right|thumb|2N3055 transistors from various manufacturers.
Excerpted from Wikipedia’s “2N3055” article, available under the CC BY-SA 4.0 licence.