MicroLED

thumb|First InGaN microLED and first passive-driven microLED display – Hongxing Jiang, et al, "Micro-size LED and detector arrays for mini-displays, hyperbright light emitting diodes, lighting, and UV detector and imaging sensor applications" US patent 6,410,940 (filed: 06/15/2000). Sixuan Jin, Jing Li, Jizhong Li, Jingyu Lin and Hongxing Jiang, "GaN Microdisk Light Emitting Diodes" Appl. Phys. Lett. 76, 631 (2000), Hongxing Jiang, Sixuan Jin, Jing Li, Jagat Shakya, and Jingyu Lin, "III-Nitride Blue Microdisplays" Appl. Phys. Lett. 78, 1303 (2001). thumb|First active-drive microLED microdisplay via integration between microLED array and Si CMOS in VGA format (640 x 480 pixels, pixels size 12 μm and pixel pitch 15 μm) capable of playing video graphics images - Jacob Day, Jing Li, Donald Lie, Zhaoyang Fan, Jingyu Lin, and Hongxing Jiang, "CMOS IC for micro-emitter based microdisplay" US patent 9,047,818 (filed by III-N Technology Inc. Priorities: US31675509P·2009-03-23; US201113046725A·2011-03-12). Jacob Day, Jing Li, Donald Lie, Charles Bradford, Jingyu Lin and Hongxing Jiang, Appl. Phys. Lett. 99, 031116 (2011); Jingyu Lin, Jacob Day, Jing Li, Donald Lie, Charles Bradford, and Hongxing Jiang, "High-resolution group III nitride microdisplays" SPIE Newsroom, Dec. issue (2011); doi: 10.1117/2.1201112.004001. thumb|Gallium nitride microLEDs transferred onto a silicon backplane - these optimized for high speed data connections MicroLED, also known as micro-LED, mLED or μLED is an emerging flat-panel display technology consisting of arrays of microscopic LEDs forming the individual pixel elements. Inorganic semiconductor microLED (μLED) technology was first invented in 2000 by the research group of Hongxing Jiang and Jingyu Lin of Texas Tech University (TTU) while they were at Kansas State University (KSU). The first high-resolution and video-capable InGaN microLED microdisplay in VGA format was realized in 2009 by Jiang, Lin and their colleagues at Texas Tech University and III-N Technology, Inc. via active driving of a microLED array by a complementary metal-oxide semiconductor (CMOS) IC.

Compared to conventional LCD displays, microLED displays offer greatly reduced energy requirements while also offering pixel-level light control and a high contrast ratio. Compared to OLEDs, the inorganic nature of microLEDs gives them a longer lifetime and allows them to display brighter images with minimal risk of screen burn-in. Compared to other display technologies used for 3D/AR/VR, the sub-nanosecond response time of μLED has a huge advantage since 3D/AR/VR displays need high frames per second and fast response times to minimise ghosting. MicroLEDs are capable of high speed modulation, and have been proposed for chip-to-chip interconnect applications.