CMOS
Sign in to savethumb|CMOS inverter (a Inverter (logic gate)|NOT logic gate)
Article
22 sectionsContents
- History
- Technical details
- Inversion
- Power supply pins
- Duality
- Logic
- Example: NAND gate in physical layout
- Power: switching and leakage
- Static dissipation
- Dynamic dissipation
- Charging and discharging of load capacitances
- Short-circuit power
- Input protection
- Analog CMOS
- RF CMOS
- Temperature range
- Single-electron MOS transistors
- See also
- Notes
- References
- Further reading
- External links
thumb|CMOS inverter (a Inverter (logic gate)|NOT logic gate)
Complementary metal–oxide–semiconductor (CMOS ) is a type of metal–oxide–semiconductor field-effect transistor (MOSFET) fabrication process that uses complementary and symmetrical pairs of p-type and n-type MOSFETs for logic functions. CMOS technology is used for constructing integrated circuit (IC) chips, including microprocessors, microcontrollers, memory chips, and other digital logic circuits. CMOS overtook NMOS logic as the dominant MOSFET fabrication process for very large-scale integration (VLSI) chips in the 1980s, replacing earlier transistor–transistor logic (TTL) technology at the same time. CMOS has since remained the standard fabrication process for MOSFET semiconductor devices. , 99% of IC chips, including most digital, analog and mixed-signal ICs, were fabricated using CMOS technology.