MOSFETs

observation on the growth of integrated circuit capacity

physical device used to store information for immediate use in a digital electronic device

thumb|upright=1.3|Two power transistor|power MOSFETs in [[D2PAK surface-mount packages. Operating as switches, each of these components can sustain a blocking voltage of 120V in the off state, and can conduct a con­ti­nuous current of 30 A in the on state, dissipating up to about 100 W and controlling a load of over 2000 W. A matchstick is pictured for scale.]]

device for the movement of electrical charge

device that converts an optical image into an electronic signal

three-terminal power semiconductor device

field-effect transistor device

physico-chemical processes contributing to protect a surface against oxidation

manufacturing process used to create integrated circuits

Italian-American physicist, engineer, inventor and entrepreneur (born 1941)

process of creating an integrated circuit by combining thousands of transistors into a single chip that began in the 1970s when complex semiconductor and communication technologies were being developed

specialty of electronic engineering

current output as a function of applied voltage for a material or device

insulating region in a conductive, dopend semiconductor

image sensor consisting of an integrated circuit

semiconductor manufacturing process

implements logic gates and other digital circuits

data storage device

characterizes how quickly an electron can move through a metal or semiconductor, when pulled by an electric field

electrical engineer and "Father of the PIN" (1924–2009)

field-effect transistor incorporating a heterojunction as the channel

An ion-sensitive field-effect transistor (ISFET) is a field-effect transistor used for measuring ion concentrations in solution; when the ion concentration (such as H+, see pH scale) changes, the current through the transistor will change accordingly. Here, the solution is used as the gate electrode. A voltage between substrate and oxide surfaces arises due to an ion sheath. It is a special type of MOSFET (metal–oxide–semiconductor field-effect transistor), and shares the same basic structure, but with the metal gate replaced by an ion-sensitive membrane, electrolyte solution and reference ele

p-type MOSFETs to implement logic gates

type of transistor used in nanoelectronic integrated circuits

dielectric with high dielectric constant κ

type of MOS field-effect transistor with more than one gate

process creating a thin layer of silicon dioxide

South Korean engineer

Bipolar CMOS (BiCMOS) is a semiconductor technology that integrates two semiconductor technologies, those of the bipolar junction transistor and the CMOS (complementary metal–oxide–semiconductor) logic gate, into a single integrated circuit. In more recent times the bipolar processes have been extended to include high mobility devices using silicon–germanium junctions.

electronic circuit element implementing a filter

buck converter that provides a microprocessor with the appropriate supply voltage

elementary data-storing circuit within an electronically addressed computer memory/storage device

power MOS field-effect transistor

A field-effect transistor-based biosensor, also known as a biosensor field-effect transistor (Bio-FET or BioFET), field-effect biosensor (FEB), or biosensor MOSFET, is a field-effect transistor (based on the MOSFET structure) that is gated by changes in the surface potential induced by the binding of molecules. When charged molecules, such as biomolecules, bind to the FET gate, which is usually a dielectric material, they can change the charge distribution of the underlying semiconductor material resulting in a change in conductance of the FET channel. A Bio-FET consists of two main compartmen

MOSFET whose gate is left galvanically isolated in a circuit

minimum source-to-gate voltage for a field effect transistor to be conducting from source to drain

semiconductor device capable of handling large amounts of electricity

integrated circuit with vertical interconnections

scientific model in solid-state physics; electron gas that is free to move in two dimensions, but tightly confined in the third

LDMOS (laterally-diffused metal-oxide semiconductor) is a planar double-diffused MOSFET (metal–oxide–semiconductor field-effect transistor) used in amplifiers, including microwave power amplifiers, RF power amplifiers and audio power amplifiers. These transistors are often fabricated on p/p+ silicon epitaxial layers. The fabrication of LDMOS devices mostly involves various ion-implantation and subsequent annealing cycles. As an example, the drift region of this power MOSFET is fabricated using up to three ion implantation sequences in order to achieve the appropriate doping profile needed to w

field-effect transistor used as a sensor for measuring chemical concentrations in solution.

number of transistors in an electronic device

scaling law based on a 1974 paper co-authored by Robert H. Dennard, above

Computer pioneer (1933–2010)

form of digital logic family in integrated circuits

transistor current

type of electronic amplifier

Semiconductor structure

field-effect transistor

SONOS, short for "silicon–oxide–nitride–oxide–silicon", more precisely, "polycrystalline silicon"—"silicon dioxide"—"silicon nitride"—"silicon dioxide"—"silicon", is a cross sectional structure of MOSFET (metal–oxide–semiconductor field-effect transistor), realized by P.C.Y. Chen of Fairchild Camera and Instrument in 1977. This structure is often used for non-volatile memories, such as EEPROM and flash memories. It is sometimes used for TFT LCD displays.

transistor which uses the field-effect due to the partial charges of DNA

dielectric layer of a MOSFET separating the source and drain from the gate terminal

type of thyristor

Applied electric field conductivity change

secondary effect describing the reduction in threshold voltage Vth in MOSFETs with non-uniformly doped channel regions as the gate length increases

integrated circuits manufacturing process

An EOSFET or electrolyte–oxide–semiconductor field-effect transistor is a FET, like a MOSFET, but with an electrolyte solution replacing the metal for the detection of neuronal activity. Many EOSFETs are integrated in a neurochip.

type of flash storage

effect in field effect transistors

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